Onsemi (BDX33CG) Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V
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  • Onsemi (BDX33CG) Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V

Onsemi (BDX33CG) Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V

R259.00
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Onsemi (BDX33CG) Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V

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Product Overview The BDX33CG is a 10A PNP bipolar power Darlington Transistor designed for general purpose and low speed switching applications. Complementary device Monolithic construction with built-in base emitter shunt resistors Low collector-emitter saturation voltage VCE(sat) = 2.5VDC maximum at IC = 3A DC Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 100V Transition Frequency ft: - Power Dissipation Pd: 70W DC Collector Current: 10A DC Current Gain hFE: 750hFE Transistor Mounting: Through Hole Transistor Case Style: TO-220 No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: -

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