Infineon (IRF1405PBF) Power MOSFET, N Channel, 55 V, 169 A, 0.0053 ohm

Power MOSFET, N Channel, 55 V, 169 A, 0.0053 ohm, TO-220AB, Through Hole Product Overview The IRF1405PBF is a 55V N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. Suitable for anti-lock braking system, electric power steering, wiper control and climate control applications. 175°C Operating temperature Repetitive avalanche allowed up to Tjmax Dynamic dV/dt rating Applications Automotive Product Information Channel Type: N Channel Transistor Polarity: N Channel Drain Source Voltage Vds: 55V Continuous Drain Current Id: 169A Drain Source On State Resistance: 0.0053ohm On Resistance Rds(on): 0.0053ohm Transistor Case Style: TO-220AB Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 330W Power Dissipation: 330W No. of Pins: 3Pins Operating Temperature Max: 175°C