STMicroelectronics (BD139) Bipolar (BJT) Single Transistor, NPN, 80V, 1.5A

Bipolar (BJT) Single Transistor, NPN, 80 V, 1.5 A, 1.25 W, TO-126, Through Hole Product Overview The BD139 is a NPN complementary low voltage NPN transistor in 3 pin SOT-32 package. This device is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. Products are pre-selected in DC current gain Collector to emitter voltage (Vce) is 80V Collector current (Ic) is 1.5A Power dissipation (Pd) is 12.5W Collector to emitter saturation voltage of 500mV at 0.5A collector current DC current gain (hFE) of 25 at 0.5A collector current Operating junction temperature range from 150°C Applications Power Management, Consumer Electronics, Portable Devices, Industrial Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 80V DC Collector Current: 1.5A Power Dissipation Pd: 1.25W Transistor Case Style: TO-126 Transistor Mounting: Through Hole No. of Pins: 3Pins Transition Frequency ft: - DC Current Gain hFE: 40hFE Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: -