Onsemi (TIP142G) Bipolar (BJT) Single Transistor, NPN, 100 V, 10 A

Product Overview The TIP142G is a 100V NPN complementary silicon Darlington Power Transistor designed for general purpose amplifier and low frequency switching applications. It has monolithic construction with built-in base-emitter shunt resistor. The TIP142 (NPN) and TIP147 (PNP) are complementary devices. High DC current gain 100VDC Minimum collector-emitter sustaining voltage (VCEO (sus)) 100VDC Collector to base voltage (VCBO) 5VDC Emitter to base voltage (VEBO) 1°C/W Thermal resistance, junction to case 35.7°C/W Thermal resistance, junction to ambient Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 100V Transition Frequency ft: - Power Dissipation Pd: 125W DC Collector Current: 10A DC Current Gain hFE: 500hFE Transistor Mounting: Through Hole Transistor Case Style: TO-247 No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: -