Infineon (IRFB4321PBF) Power MOSFET, N Channel, 150 V, 83 A, 0.015 ohm

Power MOSFET, N Channel, 150 V, 83 A, 0.015 ohm, TO-220AB, Through Hole Product Overview The IRFB4321PBF is a HEXFET® single N-channel Power MOSFET offers low gate charge improves the switching performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. Low RDS (ON) reduces losses Improved diode recovery improves switching and EMI performance 30V Gate voltage rating improves robustness Fully characterized avalanche SOA Applications Automation & Process Control, Power Management, Industrial Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 83A Drain Source Voltage Vds: 150V Drain Source On State Resistance: 0.015ohm On Resistance Rds(on): 0.015ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 5V Power Dissipation Pd: 330W Transistor Case Style: TO-220AB Power Dissipation: 330W No. of Pins: 3Pins Operating Temperature Max: 175°C