Infineon (IPT007N06NATMA1) Power MOSFET, N Channel, 60 V, 300 A, 660 µohm

Power MOSFET, N Channel, 60 V, 300 A, 660 µohm, HSOF, Surface Mount Product Overview The IPT007N06N is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. Industry's lowest R DS(on) Highest current capability up to 300A Very low package parasitic and inductances Less paralleling and cooling required Highest system reliability Enabling very compact design 100% Avalanche tested Superior thermal resistance Qualified according to JEDEC for target applications Halogen-free, Green device Applications Power Management, Communications & Networking, Lighting, Automotive Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 300A Drain Source Voltage Vds: 60V Drain Source On State Resistance: 660µohm On Resistance Rds(on): 660µohm Rds(on) Test Voltage: 10V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 2.8V Power Dissipation Pd: 375W Transistor Case Style: HSOF Power Dissipation: 375W No. of Pins: 8Pins Operating Temperature Max: 175°C