Onsemi (NTH4L040N120SC1) Silicon Carbide MOSFET, Single, N Channel, 58 A

Silicon Carbide MOSFET, Single, N Channel, 58 A, 1.2 kV, 0.04 ohm, TO-247 Product Information MOSFET Module Configuration: Single Channel Type: N Channel Transistor Polarity: N Channel Drain Source Voltage Vds: 1.2kV Continuous Drain Current Id: 58A On Resistance Rds(on): 0.04ohm Drain Source On State Resistance: 0.04ohm Transistor Case Style: TO-247 No. of Pins: 4Pins Rds(on) Test Voltage: 20V Gate Source Threshold Voltage Max: 3V Power Dissipation Pd: 319W Power Dissipation: 319W Operating Temperature Max: 175°C