Vishay (IRLD110PBF) Power MOSFET, N Channel, 100 V, 1 A, 0.54 ohm

Power MOSFET, N Channel, 100 V, 1 A, 0.54 ohm, DIP, Through Hole Product Overview N-channel power MOSFET in HVMDIP package Dynamic dV/dt rating Repetitive avalanche rated For automatic insertion End stackable Logic-level gate drive 175°C operating temperature Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 1A Drain Source Voltage Vds: 100V Drain Source On State Resistance: 0.54ohm On Resistance Rds(on): 0.54ohm Rds(on) Test Voltage: 5V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 2V Power Dissipation Pd: 1.3W Transistor Case Style: DIP Power Dissipation: 1.3W No. of Pins: 4Pins Operating Temperature Max: 175°C