Diodes Inc. (ZXTN2010ZTA) Bipolar (BJT) Single Transistor, NPN, 80 V
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  • Diodes Inc. (ZXTN2010ZTA) Bipolar (BJT) Single Transistor, NPN, 80 V

Diodes Inc. (ZXTN2010ZTA) Bipolar (BJT) Single Transistor, NPN, 80 V

R219.00
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Diodes Inc. (ZXTN2010ZTA) Bipolar (BJT) Single Transistor, NPN, 80 V

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Product Overview The ZXTN2010ZTA is a NPN low saturation medium power Bipolar Transistor offers 5A high continuous collector current and 150V collector-base voltage. It is suitable for emergency lighting circuits, motor driving (including DC fans), power switches, gate driving MOSFETs and IGBTs and backlight inverters. UL94V-0 Flammability rating 30mR RSAT for a Low Equivalent ON-resistance <65mV Low saturation voltage VCE(SAT) @ IC = 1A hFE specified up to 10A for high current gain hold up PNP complementary is ZXTP2012Z Halogen-free, Green device -55 to 150°C Operating temperature range Applications Aerospace, Defence, Military, Automotive, Motor Drive & Control, Lighting, Computers & Computer Peripherals, Power Management, Industrial Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 80V Transition Frequency ft: 130MHz Power Dissipation Pd: 1.5W DC Collector Current: 5A DC Current Gain hFE: 200hFE Transistor Mounting: Surface Mount Transistor Case Style: SOT-89 No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: MSL 1 - Unlimited

1843772RL
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