Infineon (SMBT3904E6327HTSA1) Bipolar (BJT) Single Transistor, NPN, 40 V
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  • Infineon (SMBT3904E6327HTSA1) Bipolar (BJT) Single Transistor, NPN, 40 V

Infineon (SMBT3904E6327HTSA1) Bipolar (BJT) Single Transistor, NPN, 40 V

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Infineon (SMBT3904E6327HTSA1) Bipolar (BJT) Single Transistor, NPN, 40 V

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Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 330 mW, SOT-23, Surface Mount Product Overview The SMBT 3904 E6327 is a NPN silicon switching Bipolar Transistor with low collector-emitter saturation voltage. 0.1 to 100mA High DC current gain SMBT3906/MMBT3906 Complementary types Applications Power Management, Industrial Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 40V Transition Frequency ft: 270MHz Power Dissipation Pd: 330mW DC Collector Current: 200mA DC Current Gain hFE: 100hFE Transistor Mounting: Surface Mount Transistor Case Style: SOT-23 No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: AEC-Q101 MSL: -

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