Vishay (IRFBG20PBF) Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm

Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm, TO-220AB, Through Hole Product Overview The IRFBG20PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The package is universally preferred at power dissipation levels to approximately 50W. The low thermal contribute to its wide acceptance throughout the industry. Dynamic dV/dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements Applications Industrial, Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 1.3A Drain Source Voltage Vds: 1kV Drain Source On State Resistance: 11.5ohm On Resistance Rds(on): 11.5ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 50W Transistor Case Style: TO-220AB Power Dissipation: 50W No. of Pins: 3Pins Operating Temperature Max: 150°C