STMicroelectronics (MJD350T4) Bipolar (BJT) Single Transistor, PNP, 300V
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  • STMicroelectronics (MJD350T4) Bipolar (BJT) Single Transistor, PNP, 300V

STMicroelectronics (MJD350T4) Bipolar (BJT) Single Transistor, PNP, 300V

R123.76
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STMicroelectronics (MJD350T4) Bipolar (BJT) Single Transistor, PNP, 300V

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Bipolar (BJT) Single Transistor, PNP, 300 V, 500 mA, 15 W, TO-252 (DPAK), Surface Mount Product Overview The MJD350T4 is a NPN-PNP complementary silicon Power Transistor manufactured using medium voltage Epitaxial Planar technology, resulting in a rugged high performance transistor. Surface-mount power package Electrical similar to MJE340 and MJE350 Product Information Transistor Polarity: PNP Collector Emitter Voltage V(br)ceo: 300V DC Collector Current: 500mA Transition Frequency ft: - Power Dissipation Pd: 15W DC Current Gain hFE: 30hFE Transistor Mounting: Surface Mount Transistor Case Style: TO-252 (DPAK) No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: MSL 1 - Unlimited

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