Infineon (SPA08N80C3XKSA1) Power MOSFET, N Channel, 800 V, 8 A, 0.65 ohm

Power MOSFET, N Channel, 800 V, 8 A, 0.65 ohm, TO-220FP, Through Hole Product Overview The SPA08N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is suitable for solar, PC Power and adapter applications. New revolutionary high voltage technology Extreme dV/dt rated Periodic avalanche rated Qualified according to JEDEC for target applications Ultra low effective capacitance Fully isolated package Improved transconductance Low specific ON-state resistance Field proven CoolMOS™ quality Very low energy storage in output capacitance (Eoss)@400V High efficiency and power density Outstanding performance High reliability Ease of use Applications Industrial, Power Management, Alternative Energy, Consumer Electronics Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 8A Drain Source Voltage Vds: 800V Drain Source On State Resistance: 0.65ohm On Resistance Rds(on): 0.65ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 3V Power Dissipation Pd: 40W Transistor Case Style: TO-220FP Power Dissipation: 40W No. of Pins: 3Pins Operating Temperature Max: 150°C