Onsemi (FQP7P06) Power MOSFET, P Channel, 60 V, 7 A, 0.41 ohm

Power MOSFET, P Channel, 60 V, 7 A, 0.41 ohm, TO-220, Through Hole Product Overview The FQP7P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications. Low gate charge 100% avalanche tested Improved system reliability in PFC and soft switching topologies Switching loss improvements Lower conduction loss 175°C maximum junction temperature rating Product Information Channel Type: P Channel Transistor Polarity: P Channel Drain Source Voltage Vds: 60V Continuous Drain Current Id: 7A Drain Source On State Resistance: 0.41ohm On Resistance Rds(on): 0.41ohm Transistor Case Style: TO-220 Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 45W Power Dissipation: 45W No. of Pins: 3Pins Operating Temperature Max: 175°C