Infineon (IRFB7434PBF) Power MOSFET, N Channel, 40 V, 195 A, 0.00125 ohm

Power MOSFET, N Channel, 40 V, 195 A, 0.00125 ohm, TO-220AB, Through Hole Product Overview The IRFB7434PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters. Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and di/dt capability Applications Motor Drive & Control, Power Management, Consumer Electronics Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 195A Drain Source Voltage Vds: 40V Drain Source On State Resistance: 0.00125ohm On Resistance Rds(on): 0.00125ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 3V Power Dissipation Pd: 294W Transistor Case Style: TO-220AB Power Dissipation: 294W No. of Pins: 3Pins Operating Temperature Max: 175°C MSL: MSL 1 - Unlimited