Infineon (IRF5210STRLPBF) Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm

Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount Product Overview The IRF5210STRLPBF is a HEXFET® single P-channel Power MOSFET offers of this design is a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. Advanced process technology Ultra-low ON-resistance Fast switching Repetitive avalanche allowed up to Tjmax Applications Automotive, Power Management Product Information Channel Type: P Channel Transistor Polarity: P Channel Continuous Drain Current Id: 38A Drain Source Voltage Vds: 100V Drain Source On State Resistance: 0.06ohm On Resistance Rds(on): 0.06ohm Transistor Case Style: TO-263 (D2PAK) Rds(on) Test Voltage: 10V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 3.8W Power Dissipation: 3.8W No. of Pins: 3Pins Operating Temperature Max: 150°C