Infineon (IRF5305PBF) Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm

Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole Product Overview The IRF5305PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications. Drain to source voltage Vds is -55V Gate to source voltage is ±20V On resistance Rds(on) of 60mohm at Vgs of -10V Power dissipation Pd of 110W at 25°C Continuous drain current Id of -31A at Vgs -10V and 25°C Junction temperature range from -55°C to 175°C Product Information Channel Type: P Channel Transistor Polarity: P Channel Drain Source Voltage Vds: 55V Continuous Drain Current Id: 31A Drain Source On State Resistance: 0.06ohm On Resistance Rds(on): 0.06ohm Transistor Case Style: TO-220AB Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 110W Power Dissipation: 110W No. of Pins: 3Pins Operating Temperature Max: 175°C