Vishay (IRF9530PBF) Power MOSFET, P Channel, 100 V, 12 A, 0.3 ohm

Power MOSFET, P Channel, 100 V, 12 A, 0.3 ohm, TO-220AB, Through Hole Product Overview The IRF9530PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W. Dynamic dV/dt rating Repetitive avalanche rated 175°C Operating temperature Easy to parallel Simple drive requirement Fast switching Applications Power Management Product Information Channel Type: P Channel Transistor Polarity: P Channel Continuous Drain Current Id: 12A Drain Source Voltage Vds: 100V Drain Source On State Resistance: 0.3ohm On Resistance Rds(on): 0.3ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 88W Transistor Case Style: TO-220AB Power Dissipation: 88W No. of Pins: 3Pins Operating Temperature Max: 175°C