Vishay (IRF640PBF) Power MOSFET, N Channel, 200 V, 18 A, 0.18 ohm

Power MOSFET, N Channel, 200 V, 18 A, 0.18 ohm, TO-220AB, Through Hole Product Overview The IRF640PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W. Dynamic dV/dt rating Repetitive avalanche rated 175°C Operating temperature Easy to parallel Simple drive requirement Applications Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 18A Drain Source Voltage Vds: 200V Drain Source On State Resistance: 0.18ohm On Resistance Rds(on): 0.18ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 125W Transistor Case Style: TO-220AB Power Dissipation: 125W No. of Pins: 3Pins Operating Temperature Max: 150°C