Infineon (IPP80N06S209AKSA2) Power MOSFET, N Channel, 55 V, 80 A

Power MOSFET, N Channel, 55 V, 80 A, 0.0076 ohm, TO-220, Through Hole Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 80A Drain Source Voltage Vds: 55V Drain Source On State Resistance: 0.0076ohm On Resistance Rds(on): 0.0076ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 3V Power Dissipation Pd: 190W Transistor Case Style: TO-220 Power Dissipation: 190W No. of Pins: 3Pins Operating Temperature Max: 175°C Qualification: AEC-Q101 Product Range: OptiMOS Automotive Qualification Standard: AEC-Q101 MSL: MSL 1 - Unlimited