Infineon (IKW30N60H3FKSA1) IGBT, 30 A, 2.4 V, 187 W, 600 V, TO-247, 3 Pins

Product Overview The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications. Low switching losses for high efficiency Fast switching behaviour with low EMI emissions Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour Short circuit capability Excellent performance Low switching and conduction losses Applications Power Management, Alternative Energy Product Information Continuous Collector Current: 30A Collector Emitter Saturation Voltage: 2.4V Power Dissipation: 187W Collector Emitter Voltage Max: 600V Transistor Case Style: TO-247 No. of Pins: 3Pins Operating Temperature Max: 175°C