Onsemi (FDMS86500L) Power MOSFET, N Channel, 60 V, 80 A, 0.0021 ohm

Power MOSFET, N Channel, 60 V, 80 A, 0.0021 ohm, Power 56, Surface Mount Product Overview The FDMS86500L is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications. 100% UIL tested Advance package and silicon combination for low RDS (ON) and high efficiency Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 80A Drain Source Voltage Vds: 60V Drain Source On State Resistance: 0.0021ohm On Resistance Rds(on): 0.0021ohm Rds(on) Test Voltage: 10V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 1.8V Power Dissipation Pd: 104W Transistor Case Style: Power 56 Power Dissipation: 104W No. of Pins: 8Pins Operating Temperature Max: 150°C MSL: MSL 1 - Unlimited