Infineon (IPB015N08N5ATMA1) Power MOSFET, N Channel, 80 V, 180 A

Power MOSFET, N Channel, 80 V, 180 A, 0.0011 ohm, TO-263 (D2PAK), Surface Mount Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 180A Drain Source Voltage Vds: 80V Drain Source On State Resistance: 0.0011ohm On Resistance Rds(on): 0.0011ohm Transistor Case Style: TO-263 (D2PAK) Rds(on) Test Voltage: 10V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 3V Power Dissipation Pd: 375W Power Dissipation: 375W No. of Pins: 7Pins Operating Temperature Max: 175°C Product Range: OptiMOS 5 MSL: MSL 1 - Unlimited