Vishay (SI4465ADY-T1-E3) Power MOSFET, P Channel, 8 V, 13.7 A, 0.0075 ohm

Power MOSFET, P Channel, 8 V, 13.7 A, 0.0075 ohm, SOIC, Surface Mount Product Overview P-channel 1.8-V (G-S) TrenchFET® power MOSFET 100% Rg tested Product Information Channel Type: P Channel Transistor Polarity: P Channel Continuous Drain Current Id: 13.7A Drain Source Voltage Vds: 8V Drain Source On State Resistance: 0.0075ohm On Resistance Rds(on): 0.0075ohm Rds(on) Test Voltage: 4.5V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 450mV Power Dissipation Pd: 6.5W Transistor Case Style: SOIC Power Dissipation: 6.5W No. of Pins: 8Pins Operating Temperature Max: 150°C MSL: MSL 1 - Unlimited