Infineon (IRF1407STRLPBF) Power MOSFET, N Channel, 75 V, 100 A, 0.0078 ohm

Power MOSFET, N Channel, 75 V, 100 A, 0.0078 ohm, TO-263 (D2PAK), Surface Mount Product Overview The IRF1407STRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application. Advanced process technology Dynamic dV/dt rating Repetitive avalanche allowed up to Tjmax Applications Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 100A Drain Source Voltage Vds: 75V Drain Source On State Resistance: 0.0078ohm On Resistance Rds(on): 0.0078ohm Transistor Case Style: TO-263 (D2PAK) Rds(on) Test Voltage: 10V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 3.8W Power Dissipation: 3.8W No. of Pins: 3Pins Operating Temperature Max: 175°C MSL: MSL 1 - Unlimited