Infineon (IRF5210PBF) Power MOSFET, P Channel, 100 V, 40 A, 0.06 ohm

Power MOSFET, P Channel, 100 V, 40 A, 0.06 ohm, TO-220AB, Through Hole Product Overview The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area. Advanced Process Technology New Ultra Low On-Resistance Fast Switching Dynamic dv/dt Rating Fully Avalanche Rated Applications Audio, Industrial Product Information Channel Type: P Channel Transistor Polarity: P Channel Drain Source Voltage Vds: 100V Continuous Drain Current Id: 40A Drain Source On State Resistance: 0.06ohm On Resistance Rds(on): 0.06ohm Transistor Case Style: TO-220AB Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 200W Power Dissipation: 200W No. of Pins: 3Pins Operating Temperature Max: 175°C