Infineon (IRFR6215TRPBF) Power MOSFET, P Channel, 150 V, 13 A, 0.295 ohm

Power MOSFET, P Channel, 150 V, 13 A, 0.295 ohm, TO-252AA, Surface Mount Product Overview The IRFR6215TRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications. Advanced process technology Fast switching Fully avalanche rating Low static drain-to-source ON-resistance Dynamic dV/dt rating Applications Automotive, Power Management Product Information Channel Type: P Channel Transistor Polarity: P Channel Continuous Drain Current Id: 13A Drain Source Voltage Vds: 150V Drain Source On State Resistance: 0.295ohm On Resistance Rds(on): 0.295ohm Rds(on) Test Voltage: 10V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 110W Transistor Case Style: TO-252AA Power Dissipation: 110W No. of Pins: 3Pins Operating Temperature Max: 175°C MSL: MSL 1 - Unlimited