Nxp (MRF101AN) RF FET Transistor, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220

RF FET Transistor, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220 Product Overview These devices are designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The devices are exceptionally rugged and exhibit high performance up to 250 MHz. Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration Characterized from 30 to 50 V Suitable for linear application Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation Included in NXP product longevity program with assured supply for a minimum of 15 years after launch Applications Industrial, Communications & Networking Product Information Drain Source Voltage Vds: 133V Power Dissipation: 182W Power Dissipation Pd: 182W Operating Frequency Min: 1.8MHz Operating Frequency Max: 250MHz Transistor Case Style: TO-220 RF Transistor Case: TO-220 No. of Pins: 3Pins Operating Temperature Max: 175°C Product Range: MRF101AN; MRF101BN