Toshiba (TK100L60W,VQ(O) Power MOSFET, N Channel, 600 V, 100 A, 0.015 ohm

Power MOSFET, N Channel, 600 V, 100 A, 0.015 ohm, TO-3P, Through Hole Product Information Channel Type: N Channel Transistor Polarity: N Channel Drain Source Voltage Vds: 600V Continuous Drain Current Id: 100A Drain Source On State Resistance: 0.015ohm On Resistance Rds(on): 0.015ohm Transistor Case Style: TO-3P Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 3.7V Power Dissipation Pd: 797W Power Dissipation: 797W No. of Pins: 3Pins Operating Temperature Max: 150°C