Onsemi (FQP50N06...) Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm

Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220, Through Hole Product Overview The FQP50N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This device is well suited for low voltage applications such as DC/DC converters, high efficiency switching for portable and battery operated products. This product is general usage and suitable for many different applications. Low gate charge 100% avalanche tested Improved dv/dt capability Switching loss improvements Lower conduction loss 175°C maximum junction temperature rating Product Information Channel Type: N Channel Transistor Polarity: N Channel Drain Source Voltage Vds: 60V Continuous Drain Current Id: 50A Drain Source On State Resistance: 0.022ohm On Resistance Rds(on): 0.022ohm Transistor Case Style: TO-220 Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 120W Power Dissipation: 120W No. of Pins: 3Pins Operating Temperature Max: 175°C