Onsemi (HGTG11N120CND) IGBT, 43 A, 2.4 V, 298 W, 1.2 kV, TO-247, 3 Pins

Product Overview The HGTG11N120CND is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications. 340ns at TJ = 150°C Fall time Product Information Continuous Collector Current: 43A Collector Emitter Saturation Voltage: 2.4V Power Dissipation: 298W Collector Emitter Voltage Max: 1.2kV Transistor Case Style: TO-247 No. of Pins: 3Pins Operating Temperature Max: 150°C Transistor Mounting: Surface Mount