Infineon (BSS816NWH6327XTSA1) Power MOSFET, N Channel, 20 V, 1.4 A

Power MOSFET, N Channel, 20 V, 1.4 A, 0.107 ohm, SOT-323, Surface Mount Product Overview N-channel Optima's™-2 small signal transistor Enhancement mode Ultra-logic level (1.8V rated) Avalanche rated Qualified according to AEC Q101 Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 1.4A Drain Source Voltage Vds: 20V Drain Source On State Resistance: 0.107ohm On Resistance Rds(on): 0.107ohm Rds(on) Test Voltage: 2.5V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 550mV Power Dissipation Pd: 500mW Transistor Case Style: SOT-323 Power Dissipation: 500mW No. of Pins: 3Pins Operating Temperature Max: 150°C Qualification: AEC-Q101 Product Range: OptiMOS 2 Automotive Qualification Standard: AEC-Q101 MSL: MSL 1 - Unlimited