Onsemi (FQP30N06L) Power MOSFET, N Channel, 60 V, 32 A, 0.027 ohm

Power MOSFET, N Channel, 60 V, 32 A, 0.027 ohm, TO-220AB, Through Hole Product Overview The FQP30N06L is a QFET® N-channel enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. Low gate charge 100% Avalanche tested Low crss (typical 50pF) ±20V Gate-source voltage Applications Power Management, Motor Drive & Control Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 32A Drain Source Voltage Vds: 60V Drain Source On State Resistance: 0.027ohm On Resistance Rds(on): 0.027ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 2.5V Power Dissipation Pd: 79W Transistor Case Style: TO-220AB Power Dissipation: 79W No. of Pins: 3Pins Operating Temperature Max: 175°C