Stmicroelectronics (IPB027N10N3GATMA1) Power MOSFET, N Channel, 100 V

Power MOSFET, N Channel, 100 V, 120 A, 0.0023 ohm, TO-263 (D2PAK), Surface Mount Product Overview The IPB027N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM. Excellent switching performance World's lowest RDS (ON) Very low Qg and Qgd Excellent gate charge x RDS (ON) product (FOM) Environmentally friendly Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Halogen-free, Green device MSL1 rated 2 Applications Power Management, Audio, Motor Drive & Control, Industrial, Automotive Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 120A Drain Source Voltage Vds: 100V Drain Source On State Resistance: 0.0023ohm On Resistance Rds(on): 0.0023ohm Transistor Case Style: TO-263 (D2PAK) Rds(on) Test Voltage: 10V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 2.7V Power Dissipation Pd: 300W Power Dissipation: 300W No. of Pins: 3Pins Operating Temperature Max: 175°C MSL: MSL 1 - Unlimited