Vishay (IRF730APBF) Power MOSFET, N Channel, 400 V, 5.5 A, 1 ohm

Power MOSFET, N Channel, 400 V, 5.5 A, 1 ohm, TO-220AB, Through Hole Product Overview The IRF730APBF is a N-channel enhancement-mode Power MOSFET with low gate charge. Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche voltage and current Effective COSS specified Simple drive requirements Applications Industrial, Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 5.5A Drain Source Voltage Vds: 400V Drain Source On State Resistance: 1ohm On Resistance Rds(on): 1ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4.5V Power Dissipation Pd: 74W Transistor Case Style: TO-220AB Power Dissipation: 74W No. of Pins: 3Pins Operating Temperature Max: 150°C