Nexperia (PBSS306PZ,135) Bipolar (BJT) Single Transistor, PNP, 100V, 4.1A
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  • Nexperia (PBSS306PZ,135) Bipolar (BJT) Single Transistor, PNP, 100V, 4.1A

Nexperia (PBSS306PZ,135) Bipolar (BJT) Single Transistor, PNP, 100V, 4.1A

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Nexperia (PBSS306PZ,135) Bipolar (BJT) Single Transistor, PNP, 100V, 4.1A

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Bipolar (BJT) Single Transistor, PNP, 100 V, 4.1 A, 700 mW, SOT-223, Surface Mount Product Overview The PBSS306PZ,135 is a 4.1A PNP breakthrough-in small signal (BISS) Transistor in a small surface-mount plastic package with increases heat-sink. Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller printed-circuit board (PCB) area than for conventional transistors AEC-Q101 qualified NPN complement is PBSS306NZ S306PZ Marking code Product Information Transistor Polarity: PNP Collector Emitter Voltage V(br)ceo: 100V DC Collector Current: 4.1A Transition Frequency ft: 100MHz Power Dissipation Pd: 700mW DC Current Gain hFE: 300hFE Transistor Mounting: Surface Mount Transistor Case Style: SOT-223 No. of Pins: 4Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: MSL 1 - Unlimited

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