Stmicroelectronics (STD10NM60N) Power MOSFET, N Channel, 600 V, 10 A

Power MOSFET, N Channel, 600 V, 10 A, 0.53 ohm, TO-252 (DPAK), Surface Mount Product Overview The STD10NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET is developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters. 100% Avalanche tested Low gate input resistance Applications Industrial, Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 10A Drain Source Voltage Vds: 600V Drain Source On State Resistance: 0.53ohm On Resistance Rds(on): 0.53ohm Transistor Case Style: TO-252 (DPAK) Rds(on) Test Voltage: 10V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 3V Power Dissipation Pd: 70W Power Dissipation: 70W No. of Pins: 3Pins Operating Temperature Max: 150°C MSL: MSL 1 - Unlimited