Vishay (IRFBG30PBF) Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm

Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Hole Product Overview The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements 175°C Operating Temperature Applications Audio, Signal Processing, Industrial Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 3.1A Drain Source Voltage Vds: 1kV Drain Source On State Resistance: 5ohm On Resistance Rds(on): 5ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 125W Transistor Case Style: TO-220AB Power Dissipation: 125W No. of Pins: 3Pins Operating Temperature Max: 150°C