Stmicroelectronics (NDP6060) Power MOSFET, N Channel, 60 V, 48 A, 0.025 ohm

Power MOSFET, N Channel, 60 V, 48 A, 0.025 ohm, TO-220AB, Through Hole Product Overview The NDP6060 is a N-channel enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters, PWM motor controls and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminates the need for an external Zener diode transient suppressor. Critical DC electrical parameters specified at elevated temperature High density cell design for extremely low RDS (ON) Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 48A Drain Source Voltage Vds: 60V Drain Source On State Resistance: 0.025ohm On Resistance Rds(on): 0.025ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 2.9V Power Dissipation Pd: 100W Transistor Case Style: TO-220AB Power Dissipation: 100W No. of Pins: 3Pins Operating Temperature Max: 175°C