STMicroelectronics (STB13007DT4) Bipolar Single Transistor, NPN 400V 8A
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STMicroelectronics (STB13007DT4) Bipolar Single Transistor, NPN 400V 8A

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STMicroelectronics (STB13007DT4) Bipolar Single Transistor, NPN 400V 8A

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Bipolar (BJT) Single Transistor, NPN, 400 V, 8 A, 80 W, TO-263 (D2PAK), Surface Mount Product Overview The STB13007DT4 is a NPN fast-switching Power Transistor manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure to enhance switching speeds. Improved specification offers lower leakage current, tighter gain range, DC current gain pre-selection and tighter storage time range. Integrated free-wheeling diode Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Large RBSOA In compliance with the 2002/93/EC European directive Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 400V Transition Frequency ft: - Power Dissipation Pd: 80W DC Collector Current: 8A DC Current Gain hFE: 18hFE Transistor Mounting: Surface Mount Transistor Case Style: TO-263 (D2PAK) No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: MSL 1 - Unlimited

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