Infineon (BFP450H6327XTSA1) Bipolar - RF Transistor, NPN, 4.5 V, 24 GHz

Bipolar - RF Transistor, NPN, 4.5 V, 24 GHz, 500 mW, 170 mA, SOT-343 Product Overview The BFP 450 H6327 is a NPN wideband Bipolar RF Transistor with its high linearity at currents as low as 50mA the device supports energy efficient designs. The typical transition frequency is approximately 24GHz, hence the device offers high power gain at frequencies up to 3GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads. Low noise transistor Based on Infineon ́s reliable very high volume 25GHz silicon bipolar technology Halogen-free Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 4.5V Transition Frequency ft: 24GHz Power Dissipation Pd: 500mW DC Collector Current: 170mA DC Current Gain hFE: 95hFE RF Transistor Case: SOT-343 No. of Pins: 4Pins Operating Temperature Max: 150°C Transistor Mounting: Surface Mount Product Range: - Automotive Qualification Standard: AEC-Q101 MSL: MSL 1 - Unlimited