STMicroelectronics (MJE2955T) Bipolar Single Transistor, PNP, 60V, 10A

Bipolar (BJT) Single Transistor, PNP, 60 V, 10 A, 75 W, TO-220, Through Hole Product Overview The MJE2955T is a -60V Silicon Epitaxial Base PNP Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. Complementary to the MJE3055T Well-controlled hFE parameter for increased reliability Product Information Transistor Polarity: PNP Collector Emitter Voltage V(br)ceo: 60V Transition Frequency ft: 2MHz Power Dissipation Pd: 75W DC Collector Current: 10A DC Current Gain hFE: 20hFE Transistor Mounting: Through Hole Transistor Case Style: TO-220 No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: -