Infineon (IRFP9140NPBF) Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-247AC, Through Hole Product Overview The IRFP9140NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Advanced process technology Dynamic dV/dt rating Fully avalanche rated 175°C Operating temperature Applications Power Management Product Information Channel Type: P Channel Transistor Polarity: P Channel Continuous Drain Current Id: 23A Drain Source Voltage Vds: 100V Drain Source On State Resistance: 0.117ohm On Resistance Rds(on): 0.117ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 120W Transistor Case Style: TO-247AC Power Dissipation: 120W No. of Pins: 3Pins Operating Temperature Max: 175°C