Infineon (IRF3205ZPBF) Power MOSFET, Automotive, N Channel, 55 V, 110 A

Power MOSFET, Automotive, N Channel, 55 V, 110 A, 0.0065 ohm, TO-220AB, Through Hole Product Overview The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Advanced process technology Repetitive avalanche allowed up to Tjmax Applications Automotive, Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Drain Source Voltage Vds: 55V Continuous Drain Current Id: 110A Drain Source On State Resistance: 0.0065ohm On Resistance Rds(on): 0.0065ohm Transistor Case Style: TO-220AB Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 170W Power Dissipation: 170W No. of Pins: 3Pins Operating Temperature Max: 175°C