Infineon (1EDS5663HXUMA1) MOSFET Driver, High Side, 3V to 3.5V Supply

MOSFET Driver, High Side, 3V to 3.5V Supply, 8A Out, 37ns Delay, SOIC-16 Product Overview CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their "on" state. Besides, due to low threshold voltage and extremely fast switching transients, a negative "off" voltage level may be needed. Infineon's GaN EiceDRIVER™ solves these issues with very low effort. The two output stages shown below enable a zero "off" level to eliminate any duty-cycle dependence. In addition, the differential topology is able to provide negative gate drive without the need for a negative supply voltage. However, it requires a floating supply voltage not compatible with bootstrapping. Dedicated gate driver ICs for Infineon's high voltage GaN power switches (CoolGaN™, X-GaN™) Single output supply voltage (typ. 8 V, floating) Switching behavior independent of duty-cycle (2"off" voltage levels) Differential concept to ensure negative gate drive voltage under any condition Fast input-to-output propagation (37 ns) with excellent stability (+7/-6ns) Galvanic input-to-output isolation based on coreless transformer (CT) technology Common mode transient immunity (CMTI) > 200 V/ns Applications DC, DC Converters Product Information No. of Channels: 1Channels Driver Configuration: High Side Power Switch Type: GaN HEMT No. of Pins: 16Pins Driver Case Style: SOIC IC Case / Package: SOIC Supply Voltage Min: 3V Supply Voltage Max: 3.5V Operating Temperature Min: -40°C Operating Temperature Max: 85°C Input Delay: 37ns Output Delay: 37ns Product Range: GaN EiceDRIVER MSL: MSL 1 - Unlimited