Infineon (IRLU3110ZPBF) Power MOSFET, N Channel, 100 V, 63 A, 0.011 ohm

Power MOSFET, N Channel, 100 V, 63 A, 0.011 ohm, TO-251AA, Through Hole Product Overview The IRLU3110ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in industrial applications and a wide variety of other applications. Advanced process technology Repetitive avalanche allowed up to Tjmax Logic level Applications Power Management, Industrial Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 63A Drain Source Voltage Vds: 100V Drain Source On State Resistance: 0.011ohm On Resistance Rds(on): 0.011ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 2.5V Power Dissipation Pd: 140W Transistor Case Style: TO-251AA Power Dissipation: 140W No. of Pins: 3Pins Operating Temperature Max: 175°C