Infineon (IPP039N04LGXKSA1) Power MOSFET, N Channel, 40 V, 80 A, 0.0031 ohm

Power MOSFET, N Channel, 40 V, 80 A, 0.0031 ohm, TO-220, Through Hole Product Overview The IPP039N04L G is an OptiMOS™ N-channel Power MOSFET perfect choice for synchronous rectification in switched mode power supplies (SMPS). In addition it can be used for a broad range of industrial applications including fast switching DC-to-DC converter. Very low ON-resistance RDS (ON) Ideal for fast switching applications MSL1 rated Highest system efficiency Increased power density Very low voltage overshoot Logic level 100% Avalanche tested Qualified according to JEDEC for target applications Green device Applications Power Management, Motor Drive & Control, Consumer Electronics, Computers & Computer Peripherals, Communications & Networking, Portable Devices, Industrial Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 80A Drain Source Voltage Vds: 40V Drain Source On State Resistance: 0.0031ohm On Resistance Rds(on): 0.0031ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 1.2V Power Dissipation Pd: 94W Transistor Case Style: TO-220 Power Dissipation: 94W No. of Pins: 3Pins Operating Temperature Max: 175°C