Infineon (IKW40N120H3FKSA1) IGBT, 40 A, 2.4 V, 483 W, 1.2 kV

Product Overview The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications. Low switching losses for high efficiency Fast switching behaviour with low EMI emissions Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour Short circuit capability Excellent performance Low switching and conduction losses Applications Power Management, Alternative Energy Product Information Continuous Collector Current: 40A Collector Emitter Saturation Voltage: 2.4V Power Dissipation: 483W Collector Emitter Voltage Max: 1.2kV Transistor Case Style: TO-247 No. of Pins: 3Pins Operating Temperature Max: 175°C