Stmicroelectronics (SCT20N120) Silicon Carbide MOSFET, Single, 20 A, 1.2 kV

Silicon Carbide MOSFET, Single, 20 A, 1.2 kV, 0.169 ohm, HiP247 Product Information MOSFET Module Configuration: Single Channel Type: N Channel Continuous Drain Current Id: 20A Transistor Polarity: N Channel Drain Source Voltage Vds: 1.2kV On Resistance Rds(on): 0.169ohm Drain Source On State Resistance: 0.169ohm Rds(on) Test Voltage: 20V Transistor Case Style: HiP247 Gate Source Threshold Voltage Max: 3.5V Power Dissipation Pd: 175W No. of Pins: 3Pins Operating Temperature Max: 200°C Power Dissipation: 175W