Stmicroelectronics (SCT10N120) Silicon Carbide MOSFET, Single, 12 A

Silicon Carbide MOSFET, Single, 12 A, 1.2 kV, 0.5 ohm, HiP247 Product Information MOSFET Module Configuration: Single Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 12A Drain Source Voltage Vds: 1.2kV Drain Source On State Resistance: 0.5ohm On Resistance Rds(on): 0.5ohm Transistor Case Style: HiP247 No. of Pins: 3Pins Rds(on) Test Voltage: 20V Gate Source Threshold Voltage Max: 3.5V Power Dissipation Pd: 150W Power Dissipation: 150W Operating Temperature Max: 200°C MSL: MSL 1 - Unlimited